フォトルミネッセンス分光法によるIII-V族化合物半導体InGaAlPの評価

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Abstract InGaAIP light emitting diodes (LED ) are attractive visible light sources . The luminescent characterization of devices would change due to the diffusion of impurities into the active layer during the device manufacturing processes. In this paper, we evaluated the as-grown and annealed LED samples by Photoluminescence (PL) spectroscopy. The main PL peak around 2.16 eV at 77 K from the band gap of the active layer was observed with the small peak assigned to the Zn accepter level. The PL intensity of the active layer abruptly increased with increasing the excitation light intensity nonlinearly at the certain excited intensity which depends on the samples. The phenomena can be explained by the population inversion of the carrieres . We presented the relation of the PL intensity and the excited light power in the strong and weak excited region. The difference of the lifetime ratio between a radiative and a nonradiative recombination depended on the deep level of samples. The PL measurement is good evaluation method to the degree of degradation of the LED in the nondestructive measurement.
宮崎大学の論文