スパッタリング法によるZnO系薄膜の作成および酸素分圧依存性

概要

論文の詳細を見る
Abstract Zinc oxide (ZnＯ) thin film has been a promising material as well as the indium tin oxide and tin oxide for the front electrode in a variety of opto-electronic devices. In this work, DC sputtering was carried out to obtain high conductive and transparent Ga (5 wt%) -doped ZnＯ (GZＯ) films under different conditions (Ｏ2 partial pressures: Pｏ2). Undoped ZnＯ film was also grown by the DC sputtering as a reference. In undoped ZnＯ films, a carrier concentration decreased and a resistivity increased with increasing the Pｏ2. This result was due to the decreasing donor type defects such as oxygen vacancy (Vo) and/or interstitial Zn (Zni). However, a carrier concentration of the GZＯ films was almost constant with increasing the Pｏ2, It was assumed that a predominant career of the GZＯwas Ga substituted in the Zn site (Gazn) or interstitial Ga (Gai), which were expected from a higher camer concentration of 10(20乗) cm(-3乗) in the GZＯ film.
宮崎大学の論文