陽子線を照射したカルコパイライト型化合物半導体CuInSe_2薄膜の圧電素子光熱分光スペクトル(研究論文編)

概要

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Electron nonradiative relaxation through the proton-irradiation-induced defects in CuInSe_2 solar cell material were investigated by using a new developed piezoelectric photothermal spectroscopy (PPTS). Among the observed three peaks at 1.01, 0.93 and 0.84eV, it was concluded that the peak at 0.84eV was due to the proton-irradiation-induced defect. This is because this peak appeared after irradiation with the proton energy of 0.38MeV andthe fluence of 1×10^14cm^<-2>. The peaks at 1.01 and 0.93eV were attributed to free band edge exciton and intrinsic defect level, respectively. Theintensities for the latter two peaks were not affected by the irradiation. Since the irradiation defect was clearly observed at room temperature, we concluded that the PPTS technique was a very sensitive tool to study the defect level in the irradiated semiconductor thin-film solar cell structures.
都城工業高等専門学校の論文