Fabrication of A15 Nb_3Al Josephson Tunnel Junction using CF_4 Cleaning Process
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概要
- 論文の詳細を見る
A15 Nb_3Al thin-film Josephson tunnel junctions having an oxide barrier and a Pb counterelectrode have been fabricated by photolithography. Nb_3Al junction characteristics have been found to be drastically influenced by pre-cleaning conditions. Excellent junction qualities with low leakage current were achieved by adopting RF sputter-etching in Ar+CF_4 plasma as a pre-cleaning technique, instead of conventional Ar plasma. The chemical reaction of CF_4 radicals has been found to provide great utility for obtaining high quality tunnel junctions of an A15 Nb_3Al compound with a very short coherence length.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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Tanabe K
Superconductivity Research Laboratory Istec
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Tanabe Keiichi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Tanabe Keiichi
Ntt Electrical Communications Laboratories
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Katoh Y
Ntt Opto-electronics Laboratories
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Katoh Yujiro
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Michikami O
Iwate Univ. Morioka‐shi Jpn
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Michikami Osamu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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