Scanning Electron Microscope Observation of Ridge Structures Formed on (100) and (110) Gd_3Ga_5O_<12> Substrates
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概要
- 論文の詳細を見る
Straight ridge patterns about 4μm high are formed in the [01^^-2] direction on a (100)Gd_3Ga_5O_<12>(GGG) single crystal substrate and in the [11^^-2] direction on a (110)GGG substrate by argon ion-beam etching and subsequent soaking in a hot phosphoric acid solution. The ridge shapes are observed with a scanning electron microscope (SEM). The crystal faces, which appear on the ridge side walls, are examined. Although the ridge directions are polar, the ridge cross sections are symmetrical and faces with the same indices appear on both side walls. Side wall roughness is considerably influenced by the accuracy of the ridge direction alignment.
- 社団法人応用物理学会の論文
- 1993-07-01
著者
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Tate A
Ntt Photonics Laboratories Ntt Corporation
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KATOH Yujiro
NTT Opto-Electronics Laboratories
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Sugimoto N
National Institute For Environment Studies
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Katoh Y
Ntt Opto-electronics Laboratories
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TATE Akiyuki
NTT Opto-electronics Laboratories
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SUGIMOTO Naoto
NTT Opto-Electronics Laboratories
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