Ar Ion-Beam Etching of Gadolinium-Gallium Garnet

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An argon ion-beam etching technique is used to process a Gd_3Ga_5O_<12> substrate. A double-layered mask consisting of a Ta film and a photoresist shows good tolerance for the Ar-ion beam during etching. An etching depth sufficient for preparing waveguides is obtained.
社団法人応用物理学会の論文
1992-01-15

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