An Ellipsometric Study of Oxide Growth on Nb, Al and Nb_3Al Films by rf Plasma
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概要
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The rf-oxidation process on Nb, Al and Nb_3Al films has been investigated by in-situ ellipsometry. The Nb_3Al cleaned surface has a refractive index of n=2.98-i3.50 which is close to the Nb-index of n=2.98-i3.41. The Nb, Al and Nb_3Al oxide-ayers have refractive indices of n〜__-2.5, n〜__-1.7 and n〜__-2.3, respectively. The oxide growth on Nb_3Al films obeyed the logarithmic law, the same as with Nb, and was gaverned by the Nb-behavior in the rf discharge rather than by the Al-behavior. The oxygen partial pressure, rather than the rf voltage, was an effective parameter with which to control the thin oxide-ayer thicknesses.
- 社団法人応用物理学会の論文
- 1982-02-05
著者
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Tanabe K
Superconductivity Research Laboratory Istec
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Tanabe Keiichi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Tanabe Keiichi
Ntt Electrical Communications Laboratories
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Katoh Y
Ntt Opto-electronics Laboratories
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Katoh Yujiro
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Michikami O
Iwate Univ. Morioka‐shi Jpn
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Michikami Osamu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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