Formation of Ridges on Gd_3Ga_5O_<12> by Ion-Beam Etching and Subsequent Phosphoric Acid Treatment Utilizing Tri-Layered Etching Mask

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This paper investigates the shapes of straight ridges about 4 μm high, that are formed on [1 1 1], [1 0 0] and [1 1 0] oriented Gd_3Ga_5O_<12> (GGG) single crystal substrates by utilizing a Ta/organic layer/Si_3N_4 tri-layered etching mask. Following argon ion-beam etching, the substrates are soaked in phosphoric acid solution. After soaking, the ridges on a [1 1 1] substrate have perpendicular side walls because the Si_3N_4 film effectively protects the top surface of the ridge from acid. The stable dissolution form of a [0 0 1] direction ridge on a [1 0 0] substrate tends to have a {1 1 0} face which is inclined at 45°from the perpendicular. The side walls of a [0 0 1] direction ridge on a [1 1 0] substrate tends to be perpendicular after dissolution.
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1992-12-15