Thermal Annealing of Amorphous V_3Si Thin Films
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概要
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Superconducting properties of films prepared by annealing of amorphous V-Si thin films were investigated. Superconducting transition temperatures, T_c, phases and lattice constants for the films have been determined as a function of annealing temperature. By annealing at 560℃ for 1 h at 1.3×10^<-1> Pa, the amorphous phase starts to transform into an A15 single phase. Maximum T_c onsets for films annealed for 1 h at 1.3×10^<-1> Pa and 1.3×10^<-5> Pa reach 12.0 K and 16.0 K, respectively. The T_c markedly increases with a decrease in the amount of oxygen contained in the films.
- 社団法人応用物理学会の論文
- 1982-07-20
著者
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Takenaka Hisataka
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Michikami Osamu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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