V_3Si Thin-Film Synthesis by Magnetron Sputtering
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概要
- 論文の詳細を見る
V_3Si thin-films have been produced on a thermally-oxidized Si wafer by magnetron sputtering from an arc-melted target. The phases, lattice constants and superconducting T_c were determined as functions of the substrate temperature and film thickness. The growth orientation of the films was found to change markedly with change in the substrate temperature. V_3Si films with T_c higher than 15 K have been obtained at a low substrate temperature of about 600℃. This suggests that thermalization, low substrate bombardment and high sputtering rate play an important role in obtaining high-quality V_3Si thin-films.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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Takenaka Hisataka
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Michikami Osamu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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