Internal Stress in V_3Si Thin Films Prepared by Magnetron Sputtering

概要

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The internal stress in V_3Si film prepared by magnetron sputtering on thermally-oxidized Si substrates was measured as a function of the substrate temperature T_s by the optical interference method. The intrinsic stress in the film has a maximum value at the value of T_s at which the crystalline film starts to be deposited. It then decreases with increase in T_s. The thermal stress also changes markedly at almost the same value of T_s, and increases with T_s. The value of the intrinsic stress in a well-ordered film deposited at T_s= 570℃ is approximately 1×10^9 dyn/cm^2 (tension). The thermal expansion coefficients and Young's moduli for films deposited at various values of T_s have been derived from these data. The effect of stress on the film lattice constants is discussed.
社団法人応用物理学会の論文
1983-08-20