Ion Incident Angle Dependence of Ridge Shapes Formed on [111] Oriented Gd_3Ga_5O_<12> by Ion Beam Etching
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概要
- 論文の詳細を見る
A ridge pattern is formed on a [111] oriented Gd_3Ga_5O_<12> (GGG) substrate using an argon ion-beam etching at various ion incident angles between 90° and 45°. The relation between the ridge shapes and the ion incident angles is studied. The applicability of a phosphoric acid treatment after the ion-beam etching to smooth the ridge side wall is aldo examined. The ridge shape strongly depends on the ion incident angle. The phosphoric acid treatment causes a noticeable change of ridge shape dependent on the GGG crystal structure.
- 社団法人応用物理学会の論文
- 1992-05-01
著者
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Shibukawa A
Ntt Opto-electronics Laboratories
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Tate A
Ntt Photonics Laboratories Ntt Corporation
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KATOH Yujiro
NTT Opto-Electronics Laboratories
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Sugimoto N
National Institute For Environment Studies
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Katoh Y
Ntt Opto-electronics Laboratories
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TATE Akiyuki
NTT Opto-electronics Laboratories
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SUGIMOTO Naoto
NTT Opto-Electronics Laboratories
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SHIBUKAWA Atsushi
NTT Opto-eletctronics Laboratories
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Shibukawa Atsushi
Ntt Opto-electronics Laboratories
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