[110]-Directed Ridge Formation of Epitaxial Y_3Fe_5O_<12> Film Grown on [111]-Oriented Gd_3Ga_5O_<12>
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概要
- 論文の詳細を見る
An epitaxially grown Y_3Fe_5O_<12> (YIG) film on a [111] oriented Gd_3Ga_5O_<12> (GGG) substrate is processed to form a [110]-directed ridge pattern by argon ion-beam etching and subsequent soaking in phosphoric acid solution. The appearance of (210) faces strongly depends on the temperature at which the film is soaked in the solution. The etch rate of YIG film in the solution is about half that of GGG. A GGG perpendicular side wall is obtained under the YIG ridge after soaking at 140℃ for 13 min. A circular near-field intensity pattern is observed at λ=1.55 μm for a 3-μm-wide buried YIG waveguide which is prepared by an ion-beam etching process with soaking in the solution.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Shibukawa A
Ntt Opto-electronics Laboratories
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Tate A
Ntt Photonics Laboratories Ntt Corporation
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KATOH Yujiro
NTT Opto-Electronics Laboratories
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Sugimoto N
National Institute For Environment Studies
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Katoh Y
Ntt Opto-electronics Laboratories
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TATE Akiyuki
NTT Opto-electronics Laboratories
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SUGIMOTO Naoto
NTT Opto-Electronics Laboratories
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SHIBUKAWA Atsushi
NTT Opto-eletctronics Laboratories
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Shibukawa Atsushi
Ntt Opto-electronics Laboratories
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