Preparation of Substituted Y_3Fe_5O_<12> Waveguide Directional Coupler Using Ion-Beam Etching
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概要
- 論文の詳細を見る
The rib waveguide directional coupler of an epitaxially grown 4-μm-thick substituted Y_3Fe_5O_<12> (YIG) mono-layer film on a [111]-oriented Gd_3Ga_5O_<12> (GGG) substrate is prepared by argon ion-beam etching. A Ta/organic layer double-layer mask is utilized during ion-beam etching. The basic operation of the directional coupler at λ=1.55 μm is demonstrated.
- 社団法人応用物理学会の論文
- 1993-01-15
著者
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Shibukawa A
Ntt Opto-electronics Laboratories
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Tate A
Ntt Photonics Laboratories Ntt Corporation
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Sugimoto N
National Institute For Environment Studies
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TATE Akiyuki
NTT, Opto-electronics Laboratories
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SHIBUKAWA Atsushi
NTT, Opto-electronics Laboratories
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Katoh Y
Ntt Opto-electronics Laboratories
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SUGIMOTO Naoto
NTT, Opto-Electronics Laboratories
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KATOH Yujiro
NTT, Opto-Electronics Laboratories
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