Defect Production Induced by Primary Ionization in Ion-Irradiated Oxide Superconductors : Atoms and Molecules
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概要
- 論文の詳細を見る
Resistivity as a function of ion-fluence has been measured in situ in thin films of oxide super-conductor EuBa_2Cu_3O_y irradiated with various heavy ions in a wide energy range of 90 MeV-3.84 GeV. From the resistivity measurements, the quantities characterizing the irradiation-induced columnar defects, such as the diameter of the columnar defect and the inside-resistivity (the resistivity inside the columnar defect), have been estimated. It is found that they are not scaled with the electronic stopping power, while they are strongly correlated with the primary ionization rate which is the number of atoms primarily ionized by an incident ion per unit path length. This result suggests that the defect production is triggered by Coulomb repulsion of ionized atoms. Based on the results of thermal annealing of irradiated samples, structure of the columnar defects has also been discussed.
- 社団法人日本物理学会の論文
- 2000-11-15
著者
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Wakana Hironori
Faculty Of Engineering Iwate University
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Chimi Yasuhiro
Department Of Materials Science Japan Atomic Energy Research Institute (jaeri)
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Chimi Yasuhiro
Department Of Materials Science Japan Atomic Energy Agency
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MICHIKAMI Osamu
Faculty of Engineering, Iwate University
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IWASE Akihiro
Department of Materials Science, Osaka Prefecture University
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ISHIKAWA Norito
Department of Materials Science, Japan Atomic Energy Research Institute (JAERI)
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KAMBARA Tadashi
The Institute of Physical and Chemical Research (RIKEN)
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Iwase Akihiro
Department Of Materials Science Japan Atomic Energy Research Institute (jaeri)
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Wakana H
Iwate Univ. Morioka‐shi Jpn
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Michikami O
Iwate Univ. Morioka‐shi Jpn
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Michikami Osamu
Faculty Of Engineering Iwate University
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Kambara Tadashi
The Institute Of Physical And Chemical Research
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Ishikawa Norito
Department Of Materials Science Japan Atomic Energy Research Institute (jaeri)
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