Reaction of Implanted N Isotope with SiO_2 Near Si_3N_4-Film and SiO_2-Substrate Interface

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概要

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• We have investigated 100 keV 15N (90% enriched) implantation effects on Si3N4 films on SiO2-glass-substrate. The Si3N4 films were prepared by using reactive RF-magnetron-sputter-deposition method in N2 (natural isotope abundance) gas at room temperature. The composition and film thickness were measured by Rutherford backscattering spectroscopy (RBS) and optical absorption spectroscopy. The RBS and optical absorption spectroscopy show increase in the film thickness with the stoichiometric composition, by 15N ion implantation. These results and depth distribution of the implanted 15N, which is obtained by nuclear reaction analysis (NRA), lead to formation of Si315N4 film (embedded isotope rich nitride film). Enrichment of 15N in the grown silicon-nitride film is estimated to be ∼70%.

• 社団法人 日本原子力学会の論文
• 2006-04-25

著者

• TAZAWA Masato

  National Institute of Advanced Industrial Science and Technology

• Chimi Yasuhiro

  Department Of Materials Science Japan Atomic Energy Research Institute (jaeri)

• Chimi Yasuhiro

  Department Of Materials Science Japan Atomic Energy Agency

• SHINDE Ninad

  Division of Energy Science, EcoTopia Science Institute, Nagoya University

• MATSUNAMI Noriaki

  Division of Energy Science, EcoTopia Science Institute, Nagoya University

• FUKUOKA Osamu

  Division of Energy Science, EcoTopia Science Institute, Nagoya University

• SHIMURA Tetsuo

  Nano-Materials Science Division, EcoTopia Science Institute, Nagoya University

• SATAKA Masao

  Department of Materials Science, Japan Atomic Energy Agency

• Shinde Ninad

  Division Of Energy Science Ecotopia Science Institute Nagoya University

• Sataka Masao

  Department Of Materials Science Japan Atomic Energy Agency

• Fukuoka Osamu

  Division Of Energy Science Ecotopia Science Institute Nagoya University

• Shimura Tetsuo

  Nano-materials Science Division Ecotopia Science Institute Nagoya University

• Matsunami Noriaki

  Division Of Energy Science Ecotopia Science Institute Nagoya University

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• Reaction of Implanted N Isotope with SiO_2 Near Si_3N_4-Film and SiO_2-Substrate Interface
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