Recovery Treatment for EuBa_2Cu_3O_<7-δ> Films with Insulating Multilayers(<特集>Special Issue on Superconductive Electronics)
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概要
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By depositing insulating layers on oxide superconducting films, the films generally deteriorate. When an insulating multilayer of CeO_2 (50 Å)\SrTiO_3 (200 Å) was grown on 800-Å-thick EuBa_2Cu_3O_<7-δ>(EBCO) films with T_<ce>'s (T_c end-point) ahove 90K, the films exhibited Toe's of about 40K. Recovery of the deteriorated films was carried out by two treatment methods. A pure oxygen treatment, where the deteriorated films were annealed at a temperature (T_<sa>) of 550℃ and an oxygen pressure (P_<O_2>) of 100 kPa for 60 mm, and then naturally cooled, restored the films with T_<ce>'s of about 60K. An activated oxygen plasma (AOP) treatment, where the deteriorated films were exposed to oxygen plasma at a T_<sa>=550℃ for 40 min and subsequently oxygen gas was introduced into the chamber up to 2 kPa and then naturally cooled, restored the films with Toe's of about 84 K. The AOP-treated film was recovered with a cooling rate of less than 6.8℃/min, and exhibited T_<ce> of 90K. The AOP-treated film took in oxygen more effectively than the pure oxygen-treated film with the cooling process at less than P_<O_2>=100 kPa.
- 社団法人電子情報通信学会の論文
- 2002-03-01
著者
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Wakana Hironori
Faculty Of Engineering Iwate University
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FUJIBAYASHI Masaki
Faculty of Engineering, Iwate University
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FUSHIMI Noriyoshi
Faculty of Engineering, Iwate University
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MICHIKAMI Osamu
Faculty of Engineering, Iwate University
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Michikami Osamu
Faculty Of Engineering Iwate University
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Fushimi Noriyoshi
Faculty Of Engineering Iwate University
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Fujibayashi Masaki
Faculty Of Engineering Iwate University
関連論文
- Recovery Treatment for EuBa_2Cu_3O_ Films with Insulating Multilayers(Special Issue on Superconductive Electronics)
- Defect Production Induced by Primary Ionization in Ion-Irradiated Oxide Superconductors : Atoms and Molecules
- Recovery Treatment of EuBa_2Cu_3O_ Thin Films with Activated Oxygen Plasma
- Non-c-axis-Oriented EuBa_2Cu_3O_ Thin Films Grown on Al_2O_3(1102) Substrates with CeO_2 Buffer Layers
- EuBa_2Cu_3O_ Thin Films Grown on Sapphires with Epitaxial CeO_2 Buffer Layers
- Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar + H_2 Ambience
- Superconducting Properties of EuBa_2Cu_3O_7 Thin Films Deposited on R-Plane Sapphires with CeO_2\Sm_2O_3 Buffer Layers Using Magnetron Sputtering(Recent Progress in Oxide Thin Films by Sputtering)
- Effect of Sputter Gas Pressure and RF Power on Surface Morphology of CeO2 Buffer Layers and Superconducting Properties of EuBa2Cu3O7-δ Thin Films by Magnetron Sputtering