Current and Field Characteristics and Memory Mechanism of TFEL Devices

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概要

• 論文の詳細を見る

• The apparent current-controlled negative resistance resulting from current and triangular voltages in memory and nonmemory devices is considered to be due to hot electron injection fom the ZnS layer into the insulating layer. Further studies of the current wave in memory devices has revealed a voltage-controlled negative resistance. This fact is used to construct a two-level model of primary electron sources for impact excitation to explain the memory behavior of such devices. The model takes account of the interface state for initial high-field excitation and the trap level for sustaining low-field excitation.

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• 宮下 和夫

  北大院・水・機能性物質化学

• Okada H

  Univ. Toyama Toyama Jpn

• MIYASHITA Kazuo

  Department of Bioresources Chemistry, Graduate School of Fisheries Science, Hokkaido University

• Shibata M

  Department Of Electrical Engineering Faculty Of Science And Technology Keio University

• SHIBATA Miki

  Faculty of Engineering, Toyama University

• Shibata Miki

  Department Of Electronic Engineering Toyama University

• Okada H

  Faculty Of Engineering University Of Toyama

• Onnagawa Hiroyoshi

  Department Of Electric And Electronic Engineering Faculty Of Engineering Toyama University

• Miyashita Kazuo

  Department Of Bioresources Chemistry Graduate School Of Fisheries Sciences Hokkaido University

• Miyashita Kazuo

  Department Of Bioresources Chemistry Graduate School Of Fisheries Science Hokkaido University

• Miyashita Kazuo

  Department Of Bioengineering Graduate School Of Bioscience And Biotechnology Tokyo Institute Of Technology

• Shibata Miki

  Department of Electric and Electronic Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan

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