Characteristics of Silicon Silicon-Dioxide Structures Formed by DC Reactive Sputtering
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概要
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The C-V characteristics of silicon silicon-dioxide structures fabricated using DC reactive sputtering method were investigated. The fast interface states were able to be eliminated by subjecting the sample to high temperature treatment in inert gas flow and subsequent Al-treatment. The surface state charge Q_<ss> was of the order of 10^<10>q・cm<-2> in the sample treated in nitric acid prior to oxide deposition. The substitution of a hydrofillic pretreatment for the nitric pretreatment resulted in a negative Q_<ss> of approximately -5×10^<11> q cm^<-2>. This small Q_<ss> was stable under bias-temperature stressing at 300℃ even without additional processing, and, on the other hand, the negative Q_<ss> could be stabilized with comparable ease by forming the usual phosphate glass layer on the oxide. This stable negative Q_<ss> is of interest from the viewpoint of practical application such as making normally off n-channel MOS transistors.
- 社団法人応用物理学会の論文
- 1968-10-05
著者
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IWAUCHI Shigeki
Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Sophia Unive
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Tanaka Toshio
Department Of Biomedical Laboratory Sciences Graduate School Of Health Sciences Tokyo Medical And De
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Tanaka Toshio
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Tanaka Toshio
Department Of Applied Physics Faculty Of Engineering Tokyo University
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Iwauchi Shigeki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Iwauchi Shigeki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Tanaka Toshio
Department of Applied Chemistry, Faculty of Engineering, Osaka Univeristy
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