Interface Properties of Al_2O_3-Ge Structure and Characteristicsof Al_2O_3-Ge MOS Transistors
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概要
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The interface properties of Al_2O_3-Ge structure formed on germanium wafers by DC reactive sputtering are evaluated. The fast interface states are diminished by subjecting the sample to heat treatment in an inert gas flow. The interface state density is estimated to be typically less than 4×10^<11> state/cm^2-eV from the shift of the flat-band voltage with temperature as originally adopted by Gray and Brown. From the measurement of the parallel conductance of the MOS structure, the electron capture cross section of the trap located at the interface is estimated to be about 0.9×10^<-17> cm^2 using the tunnelling model of Preier, and about 1×10^<-18> cm^2 using the surface potential fluctuation model of Nicollian and Goetzberger. With reactively sputtered Al_2O_3 films as a gate insulator, n-channel germanium MOS transistors are made with a high effective mobility. The effective mobility is typically more than 2000 cm^2/V-sec and the gate threshold voltage is about 1 volt or less.
- 社団法人応用物理学会の論文
- 1971-02-05
著者
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IWAUCHI Shigeki
Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Sophia Unive
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Tanaka Toshio
Department Of Biomedical Laboratory Sciences Graduate School Of Health Sciences Tokyo Medical And De
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Tanaka Toshio
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Tanaka Toshio
Department Of Applied Physics Faculty Of Engineering Tokyo University
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Iwauchi Shigeki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Iwauchi Shigeki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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