Effect of Heat Treatment on the Interface Characteristics in Reactively Sputtered Al_2O_3-Si Structures
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概要
- 論文の詳細を見る
Aluminum oxide (Al_2O_3) silicon MOS structures formed by DC reactive sputtering of pure aluminum in a low pressure oxygen ambient are subjected to heat treatments in various environments, and the interface characteristics of these structures are evaluated. The surface state density at the Al_2O_3-Si interface is found to be diminished by annealing in a nitrogen ambient, and be reduced further by additional heat treatment in a hydrogen ambient over a comparatively wide energy range.
- 社団法人応用物理学会の論文
- 1971-02-05
著者
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Hattori Takeshi
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Tanaka Toshio
Department Of Cardiology Matsusaka Central General Hospital
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Hattori Takeshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo:(present)the Institute
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Nagano Katsuto
Department of Electrical and Electronic Engineering Faculty of Science and Technology, Sophia Univer
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IWAUCHI Shigeki
Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Sophia Unive
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Tanaka Toshio
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Tanaka Toshio
Department Of Applied Physics Faculty Of Engineering Tokyo University
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Iwauchi Shigeki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Iwauchi Shigeki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia Univers
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Nagano Katsuto
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Sophia University
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Tanaka Toshio
Department of Applied Chemistry, Faculty of Engineering, Osaka Univeristy
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