Solid-Solid Diffusion of Boron in Silicon Using Reactive Sputtering

概要

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An investigation on the solid-solid diffusion of boron into silicon from doped oxide layer deposited by the reactive sputtering method is reported here. The surface concentrations are controlled over a wide range of low concentrations of from 10^<15> atoms cm^<-3> to 10^<17> atoms cm^<-3> and are almost independent of the diffusion temperatures and diffusion times. The diffusion profile obeys mostly the complementary error function and the diffusion coefficient obtained is expressed as D=0.15 exp (-4.25 (eV)/kT) cm^2 sec^<-1> at a concentration of about 10^<16> atoms cm^<-3> over a range of temperature of 1100℃ to 1270℃. This value is smaller than those observed at high concentrations. Furthermore the surface concentrations depend linearly on the target concentrations.
社団法人応用物理学会の論文
1968-11-05