Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow Impurities
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概要
- 論文の詳細を見る
It is possible to shift the gate threshold voltage of MOS transistors with little sacrifice of other device performances by introducinn shallow level impurities only into a region near the semiconductor surface under the gate. Some theoretical information is given which may be useful for designing MOS transistors in an attempt to realize such a shift. The effects of the impurity introduction on the characteristics of MOS diode structures are also described.
- 社団法人応用物理学会の論文
- 1971-01-05
著者
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Tanaka Toshio
Department Of Electrical And Eletronics Engineering Faculty Of Science And Technology Sophia Univers
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Tanaka Toshio
Department Of Applied Physics Faculty Of Engineering Tokyo University
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