F204 EMCZ法による8インチSi単結晶育成中の熱物質輸送(オーガナイズドセッション17 : 材料およびデバイス製造の熱工学)

概要

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Large-diameter, high-quality Si wafers are required to further the advance of ULSI(Ultra Large Scale Integrated Circuit) device processing. Therefore, new crystal growth technique is needed to obtain large-diameter, high-quality Si crystals containing homogeneously distributed oxygen in the concentration required for ULSI device processing. To address this requirement, we developed a new crystal growth technique using electromagnetic force (EMF), which we call the electromagnetic Czochralski (EMCZ) method. Using the EMCZ method, we were able to precisely control oxygen concentration and distribution in commercial-size (200 mm diameter) Si crystals. This report describes how use of the EMCZ method can be advantageous in controlling oxygen, concentration and grown-in defects in large-diameter Si crystals as well.
一般社団法人日本機械学会の論文
2001-11-03