シリコン融液の表面張力に及ぼす酸素と温度の影響

概要

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Dependence of surface tension of molten silicon on temperature, oxygen partial pressure in ambient argon gas atmosphere and oxygen concentration in molten silicon have been determined at temperatures from 1693 K to 1773 K and in the range of oxygen partial pressure from 4×10^<-22> MPa to 6×10^<-19> MPa by sessile drop method under precisely controlled oxygen partial pressure using oxygen sensor which was composed of solid electrolytes, Zr0_2・CaO. The surface tension steeply decreases with increasing the oxygen partial pressure. The extent of the surface tension reduction decreases with increasing temperature. Relations between the surface tension and the oxygen partial pressure and oxygen concentraton in the silicon melt are fairly described with Szyskowski's equation. The temperature coefficient of the surface tension is minus and the absolute value of the temperature coefficient decreases with increasing the oxygen partial pressure. Absolute value of the temperature coefficient at constant oxygen partial pressure is smaller than that at constant oxygen concentration in the silicon melt. The above oxygen dependence of temperature coefficient of the surface tension are fairly described with the equations which were derived thermodynamically based on the assumption of the oxygen equilibrium between gas and molten silicon and the equilibrium of oxygen adsorption on the surface of molten silicon.
日本結晶成長学会の論文
1997-10-10