シリコン融液の表面張力の温度および酸素等不純物濃度依存性(<小特集>高品質半導体結晶製造)

概要

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Surface tension of silicon melt was measured with the sessile drop method under precisely controlling the oxygen partial pressure, P_<O_2>, of argon atmosphere in relation to P_<O_2>, concentrations of boron and carbon in the melts, and temperature. Obtained relations between the surface tension and P_<O_2>, the impurity concentrations, and temperature in the range of P_<O_2>≤P_<O_2>, _<sat> were fairly described with Szyskowski's equation and also the equations of temperature coefficient of surface tension which were derived by authors. Results obtained under P_<O_2>>P_<O_2>, _<sat> may have a close relation to the surface tension behavior of silicon melt in the Czochralski process. Deep understanding and explanation of the results obtained under P_<O_2>>P_<O_2>, _<sat> are still remained for the task of a future study.
日本シミュレーション学会の論文
2000-06-15