1839 次世代パワーデバイスの熱的課題

概要

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Thermal property and package structure of next generation semiconductor power devices (SiC) were investigated to specify the amount of heat dissipation from the next generation semiconductor power devices. According to the investigation, th eheat dissipation density of the next generation semiconductor power devices is estimated up to approximately 300W/(cm)^2 at chip level and 100W/(cm)^2 at module level respectively. Thermal analyses were conducted for the heat dissipation obtained from the investigation. The results of the thermal analyses were conducted for the heat dissipation obtained from the investigation. The results of the thermal analyses show that heat transfer coefficient of more than 5×(10)^4[W/(m^2K)] is required to control the chip temperature rise below 100K for the heat dissipation density expected in the next generation semiconductor power devices and reduction of the thermal resistance from chip to base surface is very important to reduce the total thermal resistance in the region of heat transfer coefficient as high as 3×(10)^4[W/(m^2K)].
社団法人日本機械学会の論文
2003-08-05