Electrical Anisotropy of Layered Compound ZrSe_2 and HfSe_2
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概要
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The electrical resistivity and the Hall coefficient of the layered compound ZrSe. andHfSe. grown by iodine vapour transport method have been measured. Highanisotropy in electrical resistivities has been found for these compounds. The Hallmobility exhibits a temperature dependence of the form pcf- T "' in ZrSe. as well asin HfSe.. It is well explained in terms of homo-polar-mode optical scattering.
- 社団法人日本物理学会の論文
- 1989-02-15
著者
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Zheng Xu-guang
Department Of Electronics Faculty Of Engineering Kyushu University
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HIRAKAWA Kinshiro
Institute for Solid State Physics,University of Tokyo
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HIRAKAWA Kazuyoshi
Department of Electronics,Kyushu University
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KURIYAKI Hisao
Department of Electronics, Faculty of Engineering, Kyushu University
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Zheng Xu-guaug
Department Of Electronics Faculty Of Engineering Kyushu University
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Hirakawa Kazuyoshi
Department Of Electromics Kyusyu University
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Kuriyaki Hisao
Department Of Electronics Faculty Of Engineering
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Kuriyaki Hisao
Department Of Electronics Faculty Of Engineering Kyushu University
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Hirakawa Kinshiro
Instiute For Solid State Physics University Of Tokyo
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Hirakawa Kazuyoshi
Department Of Elctronics Engineering Kyushu University
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