Resistivity Response to Oxygen of Transition Metal Dichalcogenide TiS_2
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概要
- 論文の詳細を見る
The resistivity responses of layered compound TiS_2 to oxygen and nitrogen gases were measured around room temperature. The resistivity showed a selective and reversible response to oxygen. This may be due to the fact that oxygen intercalates into Van der Waals gaps in the layered structure of TiS_2. The resistivity showed an increment of 1% oxygen partial pressure in 10 min at 50℃. From the comparison with a commercial oxygen gas sensor, it was shown to operate at a lower temperature with the response time as short as the commercial one.
- 社団法人応用物理学会の論文
- 1994-02-15
著者
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HIRAKAWA Kazuyoshi
Department of Electronics,Kyushu University
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KURIYAKI Hisao
Department of Electronics, Faculty of Engineering, Kyushu University
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Hirakawa Kazuyoshi
Department Of Electromics Kyusyu University
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Kuriyaki H
Kyushu Univ. Fukuoka Jpn
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Kuriyaki Hisao
Department Of Electronics Faculty Of Engineering
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KISHIRO Koichi
Department of Electronics, Faculty of Engineering, Kyushu University
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TAKEMOTO Satoshi
Department of Electronics, Faculty of Engineering, Kyushu University
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Kishiro Koichi
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Takemoto Satoshi
Department Of Electronics Faculty Of Engineering Kyushu University
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Hirakawa K
Department Of Electronics Kyushu University
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Hirakawa Kazuyoshi
Department Of Elctronics Engineering Kyushu University
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