ダイヤモンド薄膜における表面伝導層の形成モデル : 多結晶薄膜とホモエピタキシャル薄膜の比較

概要

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The electrical conduction process in the p-type surface conductive layer on homoepitaxial diamond films was investigated by two-probe method. Diamond films were homoepitaxially deposited on Ib diamond (100) and (111) substrate by hot-filament CVD without impurity doping. The experimental results show that there is near insulated layer on homoepitaxial diamond films just after the deposition of diamond films and the p-type surface conductive layer may be formed by the contact with acid contained in water vapor in air as the case of polycrystalline diamond films. Furthermore, the dependence of electrical resistance at the surface of diamond films on the crystal orientation was shown by examining the electrical properties of polycrystalline, (100) and (111) homoepitaxial films surfaces.
東海大学の論文