カルコゲナイド系非晶質半導体の閾値スイッチ機構のモデル

概要

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The mechanism of field-induced threshold switching in chalcogenide amorphous semiconductor thin films is discussed with an emphasis on the unique behavior of chalcogen atoms such as valence alternation pairs (VAP) which was proposed by Kastner et al, . In this paper, switching processes are explained by a model where charged VAPs are electrically neutralized by injected excess carriers and this neutralization gives rise to a drastical increase in mobility of carrier. The carrier injection is carried out by tunneling through the potential barriers at metal electrodes/amorphous material interfaces. So, in this film, the transition from a low conductivity state to a high conductivity state occurs. On the basis of this model, the current vs. voltage relations of the film are obtained. The neumerically calculated curves show current controlled negative resistance, that is, switching characteristics. It is also shown by the calculations that the transition region appears, when mobilities increase with the density of carrier.
東海大学の論文