簡易型熱フィラメントCVD法による多結晶ダイヤモンド薄膜の合成

概要

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Synthesis conditions for un-doped polycrystalline diamond films using a conventional hot-filament CVD method are examined. The most suitable conditions for synthesizing diamond films of good quality within 1 hour are as follows, that is, the ratio of carbon source gas to hydrogen gas and substrate temperature are 9% and 670℃, respectively. Under these conditions, p-type polycrystalline diamond films doped with boron atoms are synthesized. The resistivity of films decreases, as the doping level of boron atoms increases.
東海大学短期大学部の論文