厚いポーラスシリコンにおけるフォトエッチング効果

概要

論文の詳細を見る
Thick porous silicon (PS) having the thickness more than 70μm was fabricated and the photoetching was performed after the anodization. It was found that the peak wavelength of the photoluminescence (PL) shifted toward shorter wavelength during initial stage of photoetching time and then shifted toward longer wavelength as the photoetching time increased. On the other hand, the PL peak intensity decreased monotonically with photoetching time. These phenomena were investigated on the basis of the results from scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron diffraction pattern. It could be clarified that shift of the PL peak wavelength toward longer wavelength is dominated by PL with longer wavelength from internal layer after vanishing of surface layer.
東海大学の論文