p-型ダイヤモンド/n-型シリコンヘテロ接合デバイスのバックワードダイオード特性

概要

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A p-type diamond / n-type silicon hetrojunction diode exhibits "Backward diode" charcteristics which are usually observed in heavily doped p-n homojunctions biased in the reverse direction. The important factors which mainly contribute to the current flow through the diode are electron tunneling at the reverse biased junction and voltage drop across the p-type diamond bulk. The total applied voltage is the sum of the voltages across the junction and the diamond bulk. At the reverse biased junction, electrons in the valence band of the p-type diamond tunnel into the conduction band of the n-type silicon. Considering tunneling effect and the ohmic voltage drop across the diamond, current-voltage characteristics are analytically derived. In the case where the width of the depletion layer and mobility both for electron and hole are 1.7nm and 5×1O^<-4>m^2/Vs, respectively, numerically calculated current-voltage characteristics are in good agreement with experimental results. Dependences of current-voltage characteristics on the concentration of boron atom in the diamond and ambient temperature can be explained by the proposed current transport model.
東海大学の論文