Si Etching with High Aspect Ratio and Smooth Side Profile for Mold Fabrication
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概要
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A silicon etching process for imprint mold fabrication is developed. For the imprint mold, an etching profile with a smooth side wall is fabricated in order to obtain good release characteristics. The alternative process using C4F8 plasma and SF6+O2 plasma is applied using an inductively coupled plasma etcher. The relation between the etching profiles and the process parameters is examined under various etching conditions. A vertical etching profile without a side wall scallop can be obtained at 60% O2 content. A pattern 0.12 μm wide with an aspect ratio of 27 is fabricated. A silicon mold is fabricated by the etching process under good etching conditions. Fine patterns on the mold are transferred to a 2-mm-thick poly(methyl methacrylate) (PMMA) plate by the thermal imprinting. Since a mold pattern with a smooth side wall is used, the mold can be released from the PMMA substrate without difficulty. A fine pattern 0.12 μm in wide is transferred to the PMMA substrate.
- 2006-06-30
著者
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Kawata Hiroaki
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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Hirai Yoshihiko
Department Of Bioscience And Biotechnology Faculty Of Agriculture Shinshu University
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Yasuda Masaaki
Department Of Bioscience And Biotechnology Faculty Of Agriculture University Of Ryukyus
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Kawata Hiroaki
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai 599-8531, Japan
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