Analysis of Backscattered Electron Signals in X-Ray Mask Inspection
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概要
- 論文の詳細を見る
The backscattered electron signals from X-ray masks are studied by a Monte Carlo simulation of electron scattering. 0.1 μm Au double steps on a Si substrate are chosen as sample structures of the X-ray mask. Two types of simple defect structures are assumed and the variations of the backscattered electron signals due to these defects are analyzed. Incident energy and detection angle dependences of the backscattered electron signals are studied by the simulation in order to discuss the optimum conditions required to inspect the X-ray masks precisely and efficiently.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Kawata Hiroaki
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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Yasuda Masaaki
Department Of Bioscience And Biotechnology Faculty Of Agriculture University Of Ryukyus
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Kawata Hiroaki
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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YASUDA Masaaki
Department of Agricultural Chemistry, University of the Ryukyus
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