Imprint/Photo Hybrid Lithography Using Conventional Contact Aligner
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概要
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Fine patterns were fabricated by a combination of imprint lithography and photo-lithography using a conventional contact aligner. A resist film was pressed at an atmospheric pressure. Since it was difficult to press the mold mask onto the resist film completely, the residual resist was removed by a photolithography process. An image reversal process is used. It was important that the press was carried out on an unbaked resist. Patterns were exposed to a mercury lamp without a monochromatic filter during the atmospheric pressure press. After the photolithography no residual resist could be found. Good patterns can be obtained up to approximately 0.5 μm. A 0.35 μm line and 0.65 μm space pattern can also be fabricated, but the resist thickness of the fabricated pattern is less than the initial resist thickness.
- 2004-06-15
著者
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Kawata Hiroaki
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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Kikuta Hisao
Department Of Mechanical Engineering College Of Engineering University Of Osaka Prefecture
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Hirai Yoshihiko
Department Of Bioscience And Biotechnology Faculty Of Agriculture Shinshu University
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Kikuta Hisao
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuenchou, Sakai city, Osaka 599-8531, Japan
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Hirai Yoshihiko
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuenchou, Sakai city, Osaka 599-8531, Japan
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