Analysis of Developed Pattern Profiles in X-Ray Lithography with Monochromatic X-Rays

概要

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Developed pattern profiles in X-ray lithography, including various line edge degradation effects such as the spatial spreading of photo and Auger electrons, the penumbra and the Fresnel diffraction effects with monochromatic X-ray beams of Mo L_α and Al K_α, are simulated. The developed pattern profiles are degraded by the penumbra effect to a larger extent than by the diffraction effect when patterns with a size of a quarter micron are fabricated. However, Fresnel diffraction has an appreciable degradation effect when patterns with a size of 100 nm are fabricated. The results show that a contrast of 1:1/9, which is defined as the ratio of the X-ray intensities through the opaque region of the mask to that through the clear region, is high enough to make line-and-space patterns of 200 nm period with the Al K_α X-ray source.
社団法人応用物理学会の論文
1990-04-20