CH<SUB>4</SUB>を用いたマグネトロンスパッタ法によって作製したアモルファスSiC : H薄膜の作製条件依存性

概要

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Amorphous SiC : H alloy films were prepared by magnetron sputtering of silicon in methane-argon gas mixtures.<BR>The influence of the deposition conditions, such as rf power (50-200W), sputtering pressure (4-70 mTorr), and substrate temperature (300-450°C) on the properties of the prepared films were extensively investigated. With decreasing rf power below 100 W or increasing sputtering pressure above 30 mTorr, the optical band gap and the activation energy of dark conductivity increased accompanied by an increase of the amount of Si-C bond. Moreover, it was found that the dark conductivity as well as the photoconductivity increased with increasing rf power, and they revealed the maxima at 10 mTorr in sputtering pressure. Several characteristics concerning the preferential attachment of hydrogen to carbon, and the conduction band tail width were also examined, and were discussed from the standpoint of the structural and compositional change of the films correlating with deposition conditions.
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