プレ-ナマグネトロンスパッタ法によって作製したアモルファスSi1-xGex:Hの特性

概要

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Amorphous Si1-xGex : H alloys have been prepared by r.f. planar magnetron sputtering method using composite target of Si and Ge in an atmosphere of hydrogen diluted by argon. Optical absorption coefficient, d.c. conductivity and it spectra were measured, and the dependence of these properties on Ge content x was investigated. For the films of x being about 0.1, it is found that the ratio of photo-conductivity to dark conductivity (photo sensitivity) increases and dark conductivity decreases about one order of magnitude compared with a-Si : H. This phenomenon seems to be caused by a relaxation of the disorder of tetrahedrally bonded structure. Photo-sensitivity decreases in the range of x above 0.3. This is considered to be due to the alloying effect between Si and Ge. For the films of x above 0.6, it is considered that density of localized states increases due to the decrease of bonded hydrogen, caused by the difference of sputtering rate and bonding energy with hydrogen between Si and Ge.
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