CF4を用いた反応性スパッタリング法で作成したa-SixCyFz薄膜の性質

概要

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The proprties of amorphous SixCyFz alloy thin films are studied, which are prepared by reactive rf sputtering of silicon in CF4 generally used in plasma etching processes, and by co-sputtering of silicon and carbon in CF4. As a function of the sputtering partial pressure of CF4, and the fractional area of carbon for co-sputtering, optical absorption coefficient, IR transmission spectra and the composition of the films are measured. The vibrating mode of chemical bond of CF2 and C2F6 are dominant for relatively lower value of CF4 gas pressure. SiC stretching mode becomes predominantly for higher value of CF4 gas pressure and with increasing the fractional area of carbon for co-sputtering. The optical gap and the content of carbon and fluorine are increased with increasing CF4 gas pressure. The composition of the films can be controlled using co-sputtering and changing CF4 gas pressure.
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