MNM-3A-2 不活性環境下におけるシリコンの疲労寿命定量評価と環境による寿命変化に基づく疲労機構推測の試み(セッション 3A 単結晶・多結晶シリコンの疲労寿命評価とメカニズムの解明)

概要

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An effective method of evaluation for the fatigue behavior was applied to silicon and polysilicon thin film specimens to survey if silicon is susceptible to fatigue also in N_2 gas environment. It was estimated that the polysilicon specimens have an average lifetime of about 45 years when loaded at room temperature at a frequency of 100 Hz with a stress level equal to 75% of the scale parameter of initial strength distribution. Since the estimated lifetime became significantly shorter with a higher temperature, it was speculated that accumulation of intrinsic defects such as dislocations under repeated stress may also cause fatigue degradation in silicon materials.
一般社団法人日本機械学会の論文
2010-10-12