新型メモリの将来展望とそのBiCS 型積層化に関する検討

概要

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Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has been discussed using the cost analysis ofBiCS (Bit Cost Scalable) type NAND flash memory. Vertical one transistor type memory cell which can be connected inseries and randomly accessed using gate voltage will be the promising candidates for this purpose. Finally as examples ofthis structure, BiCS type 1 transistor FeRAM, 1 transistor+1 capacitor type chain FeRAM, and 1 transistor (spintransistor) type MRAM has been discussed. These universal memory are the promising candidates for replacing thepresently available NAND type flash memory
2009-03-31