Co_2MnSi(110)エピタキシャル薄膜を用いた強磁性トンネル接合の作製(スピンエレクトロニクス)

概要

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According to Julliere's model, magnetic tunnel junctions (MTJs) with half-metallic electrodes lead to a large tunnel magnetoresistance (TMR) ratio. A Co_2MnSi Heusler alloy is theoretically expected to exhibit half-metallicity. We fabricated (110)-oriented epitaxial Co_2MnSi electrodes on sapphire substrates using W and Ta/W/Cr buffer layers. With the W buffer layer, we found that the W and Co_2MnSi layers formed a twin structure. However, with the Ta/W/Cr multi-buffer layers, we succeeded in fabricating a high・quality Co_2MnSi(110) epitaxial electrode. We fabricated a MTJ with the high-quality Co_2MnSi(110) electrode and investigated TMR effects in the MTJ. As a result, we observed a TMR ratio of about 40% at room temperature and 120% at 2 K.
社団法人日本磁気学会の論文
2007-03-01