高アニール耐性・高反平行結合強度を有する積層フェリ構造の開発

概要

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We investigated the dependencies of the saturation field, Hs, for synthetic ferrimagnetic (SyF) structures with various stacking structures on annealing temperature and Ru middle layer thickness. The buffer layer was optimized using Co75Fe25/Ru/Co75Fe25-SyF. The SyF on the Ta/Ru buffer layer demonstrated high annealing stability and large Hs. Moreover, we investigated the dependence on annealing temperature of Hs for Ta(5 nm)/Ru(5 nm)/ ferromagnetic-layer/Ru(0.8 nm)/Co40Fe40B20(2 nm) SyFs with various ferromagnetic layers. The SyFs using Co75 Fe25 and Ni80Fe20 ferromagnetic layers exhibited high annealing stability and large Hs. The dependence on Ru middle layer thickness of Hs for the SyFs consisting of Ta(5 nm)/Ru(5 nm)/Co75 Fe25(2 nm)/Ru(0.2-1.2 nm)/Co40Fe40B20(2 nm)/ MgO(2.5 nm)/Ta(10 nm) was investigated. As a result, we demonstrated the possibility of fabricating CoFeB/MgO/ CoFeB MTJs with SyF having both high annealing stability and strong interlayer exchange coupling.
社団法人　日本磁気学会の論文
2009-05-01