熱拡散法によるCMOSデバイスの試作(2) : p型ウェルの形成について

概要

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The complementary metal-oxide-semiconductor (CMOS) technology is one of the major integrated circuit technologies. For education of the semiconductor engineering, development of a CMOS process was begun. It is for a characteristic of the process to make impurities doping by a thermal diffusion method not to use the expensive equipment of ion implantation. This paper is an interim report of the development. In a beginning, it was investigated whether the p-type well of CMOS structure could be formed on n-type silicon substrates. As the p-type well could be formed, it was examined whether the CMOS inverter circuit could be made. However, the CMOS inverter circuit did not work because n-channel MOS field-effect transistor (FET) could not be formed though p-channel MOSFET could be.
有明工業高等専門学校の論文
2003-01-31