X-Ray Photoelectron Spectroscopic Study of Oxidation of InP
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概要
- 論文の詳細を見る
InP was oxidized chemically (in boiling deionized water), thermally (dry oxygen, 260℃, 30 min) and chemically under light illumination from a xenon arc lamp. The chemical compositions and their depth distributions from the surface of these oxides as well as the InP native oxide (naturally grown) were studied by angle-resolved X-ray photoelectron spectroscopy (XPS) and XPS combined with in situ Ar^+ ion etching. In any oxide, indium is first oxidized to form In_2O_3 perhaps due to depletion of phosphorus from the InP surface induced by contact annealing, etc. InPO_3 and/or InPO_4 are then successively grown on an In_2O_3 or In_2O_3 rich layer. In and P atoms diffuse through the already grown In_2O_3 layer and react with oxidant at the surface to form InPO_3 and/or InPO_4. Light illumination was found to strongly enhance oxidation of InP, and substantially increase InPO_3 and InPO_4.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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SHIBATA Noboru
Faculty of Science and Technology Science University of Tokyo
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Shibata Noboru
Faculty Of Engineering Osaka Electro-communication University
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