Helicon-Wave-Excited Plasma Treatment of SiO_x Films Evaporated on Si Substrate
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概要
- 論文の詳細を見る
A new approach to low-temperature growth of Si oxide was discussed in which SiO_x was first vacuum-evaporated on Si substrate and then treated in a magnetically excited oxygen plasma (helicon wave) at room temperature. Fairly thick oxide film was obtained. However, the quality of the oxide film was somewhat inferior to those of the oxide grown by direct oxidation of Si with helicon-wave-excited plasma.
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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Ikoma H
Sci. Univ. Tokyo Chiba Jpn
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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OKAMOTO Yoshinaga
Faculty of Science and Technology, Science University of Tokyo
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KITAYAMA Daisuke
Faculty of Science and Technology, Science University of Tokyo
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NAGASAWA Hideaki
Faculty of Science and Technology, Science University of Tokyo
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KITAJIMA Hiroyasu
Faculty of Science and Technology, Science University of Tokyo
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Kitayama D
Sci. Univ. Tokyo Chiba Jpn
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Kitayama Daisuke
Faculty Of Science And Technology Science University Of Tokyo
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Kitajima H
Kanazawa Univ. Kanazawa Jpn
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Nagasawa H
Faculty Of Science And Technology Science University Of Tokyo
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