Al_2O_3/InP Structure with Less Oxides of InP Fabricated by Helicon-Wave Exicited O_2-Ar Plasma Treatment of Al/InP
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概要
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Al_2O_3/n-InP (100) structure was fabricated by helicon-wave excited O_2-Ar plasma treatment of an Al/InP substrate. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics were measured to evaluate the electrical quality of the Al_2O_3/InP interface. X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the chemical composition and depth profile. Reasonably good C-V characteristics were obtained when the flow-rate ratios of Ar were 30% and 40%. XPS data indicated that Al_2O_3 was uniformly formed along the whole film thickness. Oxides of In (In_2O_3) and InP (InPO_3, In(PO_3)_3 and InPO_4) were scarcely observed in the film and at the interface with the InP substrate, probably due to the reductioning effect of Al. The absence of the oxides is one of the reasons for the reasonably good C-V characteristics.
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Motegi Tomoyuki
Faculty Of Science And Technology Science University Of Tokyo
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TOMITA Junji
Faculty of Science and Technology, Science University of Tokyo
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Tomita Junji
Faculty Of Science And Technology Science University Of Tokyo
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