Effect of Surface Treatments after HF Etching on Oxidation of Si

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Oxidation of the Si surfaces treated in various solvents after HF etching was investigated by means of the Schottky diode characteristics and X-ray photoelectron spectroscopy (XPS). The solvents employed were deionized water, ethanol (C_2H_5OH), trichloroethylene (CHCl:CCl_2), 1, 1, 1-trichloroethane (CH_3CCl_3), dichloromethane (CH_2Cl_2) and acetone (CH_3COCH_3). The effect of rinsing of the Si substrate in deionized water under a reduced pressure was also studied. The XPS data showed that the Si surface is oxidized the most in acetone. The degree of oxidation was the next highest in deionized water and then in ethanol. On the other hand, Si oxidation was substantially suppressed in solvents which do not include oxidant groups such as OH and CO. In deionized water under reduced pressure, oxidation was also considerably retarded. A possible oxidation kinetics are proposed to explain the experimental results. In this model, co-existence of both oxidant groups such as OH radicals and dissolved oxygen in the solvent is assumed to enhance oxidation. First OH radicals attack the Si-F and/or the Si-H bonds on the Si surface, resulting in the formation of the unterminated and the OH-terminated Si surface. Then, the Si surface is predominantly oxidized further by dissolved oxygen. Hence, oxidation can efficiently be suppressed by removing either the oxidant group or dissolved oxygen. This is in good agreement with the experimental results. The oxidation kinetics in acetone is also speculated.
社団法人応用物理学会の論文
1994-02-15

Effect of Surface Treatments after HF Etching on Oxidation of Si

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